دیتاشیت MCH4014-TL-H
مشخصات دیتاشیت
نام دیتاشیت |
MCH4014
|
حجم فایل |
307.703
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
11
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MCH4014-TL-H
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
30mA
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Power Dissipation (Pd):
350mW
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Transition Frequency (fT):
10GHz
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DC Current Gain (hFE@Ic,Vce):
60@5mA,5V
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Collector Cut-Off Current (Icbo):
1uA
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Collector-Emitter Breakdown Voltage (Vceo):
12V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
-
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Package:
MCPH-4
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Voltage - Collector Emitter Breakdown (Max):
12V
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Frequency - Transition:
10GHz
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Noise Figure (dB Typ @ f):
1.2dB @ 1GHz
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Gain:
18dB
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Power - Max:
350mW
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DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 5mA, 5V
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Current - Collector (Ic) (Max):
30mA
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Mounting Type:
Surface Mount
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Package / Case:
SOT-343F
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Supplier Device Package:
4-MCPH
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Base Part Number:
MCH40
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detail:
RF Transistor NPN 12V 30mA 10GHz 350mW Surface Mount 4-MCPH